Epitaxy相关论文
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Ba2IrO4 is a sister compound of the widely investigated Sr2IrO44 and has no IrO6 octahedral rotation nor net canted anti......
The scanning tunneling microscopy and spectroscopy of GaSb_(1-x)Bi_(x) films of a few-nanometer thic
The ultrahigh vacuum scanning tunneling microscope(STM)was used to characterize the GaSb1-xBix films of a few nanometers......
Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technolo
A high quality epitaxial Si layer by molecular beam epitaxy(MBE)on Si(001)substrates was demonstrated to fabricate a cha......
The spin dependent transport across ferromagnet/semiconductor interfaces depends critically on their structure and e......
Over the past years, synthesis of epitaxial films combining properties and functionalities of semiconductors, insulators......
A series of c-axis oriented BaTiO3/SrTiO3 superlattices with the atomic-scale precision were epitaxially grown on single......
Using the liquid phase epitaxy （LPE） technique, the solid and liquid compositions of 111-V quaternary antimonides predicte......
Two kinds of short-period type II superlattices(SLs)InAs(6 monolayers(MLs))/GaSb(3 MLs)and InAs(8 MLs)/GaSb(8 MLs)which ......
Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy ......
Using double crystal X-rays diffraction (DCXRD) and atomic force microscopy (AFM), the results of Ge x Si 1- x ......
By low-pressure metalorganic chemical vapor depostion (LP-MOCVD) system,InGaAs/AlGaAs graded-index separate-confinement ......
We report the Meissner effect studies on an Fe Se thin film grown on Nb-doped Sr Ti O3 substrate by molecular beam epita......
近年来人们报道了用ＭＢＥ方法生长ＧａＮ的飞速进展，利用ＲＦ－ＭＢＥ方法可以获得高的ＧＡＮ生长速率和高的电子迁移率。本文讨论了用ＲＦ－ＭＢＥ方法在蓝宝石衬底上生长ＧａＮ过程......
Lattice-matched InGaAs/lnP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with terti......
A model for analyzing point defects in com-pound crystals was improved. Based on this modified model, a method for measu......
Type-Ⅱ InAs/GaSb superlattices made of 13 InAs monolayers(MLs) and 7 GaSb MLs are grown on GaSb substrates by solid sou......
We investigate various methods for the calculation of the electron energy in semiconductor quantum wellsand focus on a ......
介绍了多晶硅、单晶硅的同步外延 .采用两步外延工艺 ,研究了硅烷流量、外延时间以及外延温度对外延质量参数 α的影响 .硅烷流量......
This work deals with the study of optical and morphological properties of InGaAs/AlGaAs quantum dot(QD) structures grown......
Influence of Ⅴ/Ⅲ ratio on the structural and photoluminescence properties of In_(0.52) AlAs/In_(0.53
A series of metamorphic high electron mobility transistors (MMHEMTs) with different Ⅴ/Ⅲ flux ratios are grown on GaAs ......
810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures
The 810-nm InGaAlAs/AlGaAs double quantum well(QW)semiconductor lasers with asymmetric waveg- uide structures,grown by m......
Investigation of fabrication and hetero-epitaxy relationship of CoCrPt thin films grown on CrW under
This paper reports that longitudinally oriented CoCrPt thin films with Cr85W15 underlayer and CoCr intermediate layer fo......
A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy (HVPE) on aγ-LiAlO2 substrate.To research the a......
Light extraction efficiency enhancement of GaN-based light emitting diodes by a ZnO current spreadin
Gallium nitride (GaN) based light emitting diodes (LEDs) with a thick and high quality ZnO film as a current spreading l......
An improved GaN film with low dislocation density was grown on a C-face patterned sapphire substrate (PSS) by metalorgan......
Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecul
In this paper,the effects of thickness of AlN nucleation layer grown at high temperature on AlN epi-layer crystalline qu......
Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular bea
Based on our previous work,the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg 1 ......
Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multi
Blue In0.2 Ga0.8N multiple quantum wells (MQWs) with Inx Ga1xN (x=0.01 0.04) barriers are grown by metal organic vapour ......
The structural and optical characteristics of InP-based compressively strained InGaAs quantum wells have been significan......
An 8μm thick Ga-doped ZnO(GZO) film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitti......
Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath la
Blue InGaN multiple-quantum-well (MQW) samples with different InxGa1-xN (x=0.01–0.04) underneath layers (ULs) were grow......
Type Ⅱ superlattices(SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched G......
本文建立了采用分子束外延法制备InGaP/GaAs异质结构的热力学模型,其中考虑了两个重要的因素,由晶格失配引起的内在应力和InP的脱......
Surface reconstructions and reflection high-energy electron diffraction intensity oscillations durin
The growth by molecular beam epitaxy of high quality GaAs epilayers on nonmisoriented GaAs(111)B substrates is reported.......
According to the scaling idea of local slope,we investigate numerically and analytically anomalous dynamic scaling behav......
Molecular beam epitaxy growth of GaAs on an offcut Ge (100) substrate has been systemically investigated.A high quality ......
Molecular beam epitaxy growth of a bilayer stacked InAs/GaAs quantum dot structure on a pure GaAs matrix has been system......
2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy......
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular b
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The cont......
Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence
AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent phot......
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge su
Molecular beam epitaxy growth of an In_xGa_(1-x)As/GaAs quantum well(QW) structure(x equals to 0.17 or 0.3) on offcut(10......
A series of c-axis oriented BaTiO3/SrTiO3 superlattices with the atomic-scale precision were epitaxially grown on singl......
A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high tempe......
High-quality In_(0.2)Ga_(0.8)N epilayers were grown on a GaN template at temperatures of 520 and 580℃via plasma-assiste......
The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO fi......
Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by
A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a......
